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File name: | irfz48n_1.pdf [preview irfz48n 1] |
Size: | 53 kB |
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Mfg: | International Rectifier |
Model: | irfz48n 1 🔎 |
Original: | irfz48n 1 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors International Rectifier irfz48n_1.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 09-06-2021 |
User: | Anonymous |
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File name irfz48n_1.pdf Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V 'trench' technology. The device ID Drain current (DC) 64 A features very low on-state resistance Ptot Total power dissipation 140 W and has integral zener diodes giving Tj Junction temperature 175 |
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